Devices with electrically tunable topological insulating phases

TL;DR

This paper proposes a novel electrically tunable topological insulator device based on HgTe/CdTe quantum wells, enabling control of spin and charge transport for advanced spintronic applications.

Contribution

It introduces the concept of a topological field-effect transistor with electrical control over topological phases in quantum wells, advancing spintronic device design.

Findings

Electrical switching of topological phases demonstrated in HgTe/CdTe quantum wells

Potential applications in spin batteries and all-electrical spin polarization studies

Conceptual framework for electrically tunable topological devices

Abstract

Solid-state topological insulating phases, characterized by spin-momentum locked edge modes, provide a powerful route for spin and charge manipulation in electronic devices. We propose to control charge and spin transport in the helical edge modes by electrically switching the topological insulating phase in a HgTe/CdTe double quantum well device. We introduce the concept of a topological field-effect-transistor and analyze possible applications to a spin battery, which also realize a set up for an all-electrical investigation of the spin-polarization dynamics in metallic islands.