Irreversible magnetization switching using surface acoustic waves

TL;DR

This paper develops analytical and numerical methods to identify optimal conditions for irreversible magnetization switching using surface acoustic waves, focusing on precessional and domain nucleation mechanisms in magnetic semiconductors.

Contribution

It introduces a comprehensive approach to optimize SAW-induced magnetization switching, including resonance effects and non-resonant domain nucleation in magnetic semiconductors.

Findings

Large experimental parameter window for irreversible switching identified.

Resonant SAW frequency detuning affects switching efficiency.

SAW-assisted domain nucleation is feasible with small perpendicular fields.

Abstract

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.