Charged particle detection performances of CMOS pixel sensors produced in a 0.18 um process with a high resistivity epitaxial layer
Serhiy Senyukov, Jerome Baudot, Auguste Besson, Gilles Claus, Loic, Cousin, Andrei Dorokhov, Wojciech Dulinski, Mathieu Goffe, Christine Hu-Guo,, Marc Winter

TL;DR
This study evaluates the charged particle detection performance and radiation hardness of a 0.18 um CMOS pixel sensor prototype, demonstrating its suitability for the ALICE ITS upgrade at CERN with high efficiency and robustness.
Contribution
It provides the first assessment of the 0.18 um CMOS process with high resistivity epitaxial layer for particle detection in high-radiation environments.
Findings
Signal-to-noise ratio of 22-32 before irradiation
Detection efficiency above 99.5% pre-irradiation
Detection efficiency above 98% post-irradiation
Abstract
The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 um thin CMOS Pixel Sensors (CPS) covering either the 3 innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 um CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial…
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