Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
Yunzhong Chen, Nini Pryds, Josee E. Kleibeuker, Gertjan Koster, Jirong, Sun, Eugen Stamate, Baogen Shen, Guus Rijnders, and S. Linderoth
TL;DR
This study demonstrates that amorphous oxide overlayers on SrTiO3 can induce metallic interfaces through oxygen vacancy formation, offering new pathways for nanoelectronic device development.
Contribution
It reveals that amorphous oxide overlayers can create metallic interfaces on SrTiO3, highlighting the role of redox reactions and oxygen vacancies in interface conductivity.
Findings
Metallic interfaces achieved with amorphous LaAlO3, SrTiO3, and yttria-stabilized zirconia overlayers.
Amorphous La7/8Sr1/8MnO3 films remain insulating on SrTiO3.
Interfacial conductivity linked to oxygen vacancy formation.
Abstract
The conductance confined at the interface of complex oxide heterostructures provides new opportunities to explore nanoelectronic as well as nanoionic devices. Herein we show that metallic interfaces can be realized in SrTiO3-based heterostructures with various insulating overlayers of amorphous LaAlO3, SrTiO3 and yttria-stabilized zirconia films. On the other hand, samples of amorphous La7/8Sr1/8MnO3 films on SrTiO3 substrates remain insulating. The interfacial conductivity results from the formation of oxygen vacancies near the interface, suggesting that the redox reactions on the surface of SrTiO3 substrates play an important role.
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Taxonomy
TopicsFerroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Semiconductor materials and devices