Weak Localization in Graphene: Theory, Simulations and Experiments

TL;DR

This paper offers a comprehensive analysis of magnetotransport phenomena in graphene monolayers, integrating theory, experiments, and simulations to unify understanding of weak and strong localization effects across various device types.

Contribution

It introduces a unified framework connecting weak and strong localization in graphene, validated by experimental and numerical results across different device configurations.

Findings

Weak localization of the localization length observed.

Strong agreement between theory, experiments, and simulations.

Localization effects vary with substrate and mobility.

Abstract

We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of non-quantizing magnetic fields. We discuss the effects of two carrier transport, weak localization, weak anti-localization, and strong localization for graphene devices of various mobilities, through theory, experiments and numerical simulations. In particular, we observe the weak localization of the localization length, which allows us to make the connection between weak and strong localization. It provides a unified framework for both localizations, which explains the observed experimental features. We compare these results to numerical simulation and find a remarkable agreement between theory, experiment and numerics. Various graphene devices were used in this study, including graphene on different substrates, such as glass and silicon, as well as low and high mobility devices.