Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

TL;DR

This study measures and compares energy loss rates of hot carriers in different types of graphene, revealing a universal temperature scaling and the influence of disorder on energy dissipation.

Contribution

It provides a comprehensive analysis of energy loss rates across epitaxial, exfoliated, and CVD graphene, highlighting the universal $T_e^4$ dependence and disorder effects.

Findings

Energy loss rates follow a $T_e^4$ temperature dependence at low temperatures.

Energy loss rates are weakly dependent on carrier density, scaling as n$^{-1/2}$.

Disorder enhances energy loss rates in CVD graphene samples.

Abstract

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by $\sim$40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of $T_{e}^4$ at low temperatures and depend weakly on carrier density $\propto$ n$^{-1/2}$ evidence for enhancement of the energy loss rate due to disorder in CVD samples.