20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

TL;DR

This paper demonstrates high-performance InGaAs gate-all-around nanowire MOSFETs with ultra-scaled EOT and nanowire width, achieving record low subthreshold slope and excellent scalability for future high-speed low-power logic devices.

Contribution

The paper presents the first demonstration of 20-80nm channel length InGaAs GAA nanowire MOSFETs with record high performance and scalability at an EOT of 1.2nm.

Findings

Subthreshold slope as low as 63mV/dec

Highest ION = 0.63mA/μm at VDD=0.5V

Excellent scalability with EOT=1.2nm

Abstract

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/{\mu}m and gm = 1.74mS/{\mu}m have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.