Spin transfer in ultrathin BiFeO3 film under external electric field

TL;DR

This study uses first-principles calculations to reveal spin transfer phenomena in ultrathin BiFeO3 films under external electric fields, highlighting potential applications in spintronics and multiferroic devices.

Contribution

It demonstrates the spin accumulation and transfer behavior in BiFeO3 films under electric bias, a novel insight for spintronic applications.

Findings

Up-spin and down-spin carriers accumulate on opposite surfaces.

Spin carriers move in opposite directions relative to the electric field.

BiFeO3 film shows potential for spin capacitor and multiferroic devices.

Abstract

First-principals calculations show that up-spin and down-spin carriers are accumulating adjacent to opposite surfaces of BiFeO3(BFO) film with applying external bias. The spin carriers are equal in magnitude and opposite in direction, and down-spin carriers move to the direction opposing the external electric field while up-spin ones along the field direction. This novel spin transfer properties make BFO film an intriguing candidate for application in spin capacitor and BFO-based multiferroic field-effect device.