Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

TL;DR

This paper presents the development and testing of novel n-in-p edgeless planar pixel sensors with active edge technology, designed for the ATLAS detector upgrade at HL-LHC, emphasizing radiation hardness and reduced dead area.

Contribution

It introduces a new fabrication of n-in-p edgeless planar sensors with active edge technology for improved detector coverage and performance in high-radiation environments.

Findings

Sensor simulations show robustness pre- and post-irradiation.

Preliminary test-structure results demonstrate promising fabrication quality.

Active edge technology effectively reduces dead area.

Abstract

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.