Device model of silicon nanowire bioFETs

TL;DR

This paper develops a comprehensive device model for silicon nanowire bioFETs, integrating electrochemical and biological components, and demonstrates its application using finite element analysis.

Contribution

It introduces a novel semiconductor device model for nanowire bioFETs based on the electrolytic absolute electrode potential, including detailed electrochemical and biological interactions.

Findings

Model accurately predicts bioFET behavior

Incorporates Gouy-Chapman-Stern double layer model

Uses finite element method for solution

Abstract

A device model of biological molecule sensors based on semiconductor nanowires has been developed. This model of a bioFET is based on the concept of the electrolytic absolute electrode potential. From that starting point a semiconductor device model of the nanowire solution biomolecule system was derived. The model includes the Gouy-Chapman-Stern model of the salt solution double layer, site binding charges on the electrode surface, and biological molecules in the form of a membrane layer. A simple method of solving this model is presented using the finite element method. Some examples showing the general properties of the model are given.