Dynamical Spin Injection into p-type Germanium at Room Temperature

TL;DR

This paper demonstrates room-temperature dynamical spin injection into p-type germanium using spin pumping, with the generated spin current converted to charge current via the inverse spin-Hall effect, revealing a large spin-Hall angle.

Contribution

It reports the first observation of spin injection and ISHE in p-type germanium at room temperature with a notably large spin-Hall angle.

Findings

Successful detection of electromotive force due to ISHE at RT

Estimated spin-Hall angle for p-type Ge is 2.6x10^-3

Spin injection efficiency exceeds that of p-type silicon

Abstract

We demonstrate dynamical spin injection into p-type germanium (Ge) at room temperature (RT) using spin pumping. The generated pure spin current is converted to a charge current by the inverse spin-Hall effect (ISHE) arising in the p-type Ge sample. A clear electromotive force due to the ISHE is detected at RT. The spin-Hall angle for p-type Ge is estimated to be {\theta}SHE = 2.6x10-3 at RT, which is much larger than that for p-type Si.