Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
M. Sakano, M. S. Bahramy, A. Katayama, T. Shimojima, H. Murakawa, Y., Kaneko, W. Malaeb, S. Shin, K. Ono, H. Kumigashira, R. Arita, N. Nagaosa, H., Y. Hwang, Y. Tokura, and K. Ishizaka

TL;DR
This study reveals giant Rashba-type spin-splitting in 2D electron layers near the surface of polar semiconductors BiTeX, driven by strong spin-orbit interaction and polarity, with effects observable in both conduction and valence bands.
Contribution
It provides direct experimental evidence of large Rashba spin-splitting in 2D electron gases on polar semiconductor surfaces, linking Rashba strength to band-gap size.
Findings
Giant Rashba spin-splitting observed in conduction-band subbands.
Spin-split subbands show X-dependent Rashba coupling.
Valence bands also exhibit 2D confinement effects.
Abstract
We investigate the two-dimensional (2D) highly spin-polarized electron accumulation layers commonly appearing near the surface of n-type polar semiconductors BiTeX (X = I, Br, and Cl) by angular-resolved photoemission spectroscopy. Due to the polarity and the strong spin-orbit interaction built in the bulk atomic configurations, the quantized conduction-band subbands show giant Rashba-type spin-splitting. The characteristic 2D confinement effect is clearly observed also in the valence-bands down to the binding energy of 4 eV. The X-dependent Rashba spin-orbit coupling is directly estimated from the observed spin-split subbands, which roughly scales with the inverse of the band-gap size in BiTeX.
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