Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

TL;DR

This study demonstrates resistive detection of spin resonance in epitaxial graphene, revealing key spin properties and zero-field splitting, advancing understanding of graphene's spintronic potential.

Contribution

It reports the first observation of resistively detected hole spin resonance and zero-field pseudo-spin splitting in epitaxial graphene, providing new insights into its spin properties.

Findings

Detection of microwave-induced electrical responses in graphene

Measurement of g-factor and spin relaxation time

Observation of zero-field pseudo-spin splitting

Abstract

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field.