Growth and Electronic Structure of Boron-Doped Graphene
J. Gebhardt, R. J. Koch, W. Zhao, O. H\"ofert, K. Gotterbarm, S., Mammadov, C. Papp, A. G\"orling, H.-P. Steinr\"uck, and Th. Seyller

TL;DR
This study investigates how boron doping alters the electronic structure of graphene, demonstrating synthesis methods, experimental analysis, and theoretical calculations to understand the doping effects on band structure and adsorption geometry.
Contribution
It provides a combined experimental and theoretical analysis of boron-doped graphene on Ni(111), revealing the doping-induced band shifts and preferred adsorption sites.
Findings
Boron doping shifts graphene bands to lower binding energies.
Doping level of 0.3 ML causes up to 1.2 eV band shift.
Doping and adsorption effects on band structure are distinguishable.
Abstract
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk on the other hand. The chemical environment of boron was determined by x-ray photoelectron spectroscopy and angle resolved photoelectron spectroscopy was used to analyze the impact on the band structure. Doping with boron leads to a shift of the graphene bands to lower binding energies. The shift depends on the doping concentration and for a doping level of 0.3 ML a shift of up to 1.2 eV is observed. The…
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