Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

TL;DR

This paper develops a microscopic theory explaining how magnetic fields induce mixing of heavy-hole states in [111] grown GaAs quantum dots, accounting for their trigonal shape and matching experimental observations.

Contribution

It introduces a detailed theoretical model incorporating dot shape and magnetic effects, aligning with experimental data on hole state mixing in quantum dots.

Findings

Quantitative agreement with experimental polarization and energy splitting data.

Demonstrates the impact of trigonal symmetry on hole state mixing.

Provides a framework for understanding magnetic field effects in quantum dot systems.

Abstract

We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.