Growth of Large Domain Epitaxial Graphene on the C-Face of SiC

TL;DR

This paper reports on controlled growth of large-area monolayer epitaxial graphene on the C-face of SiC using a confinement controlled sublimation method, revealing a new growth mode that preserves surface flatness.

Contribution

It introduces a novel 'stepdown' growth mode for epitaxial graphene on SiC that enables large, uniform monolayer domains while maintaining surface morphology.

Findings

Successful growth of large-area monolayer graphene

Discovery of the 'stepdown' growth mode

Preservation of initial surface flatness

Abstract

Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patterns uncover two important aspects of the growth, i.e. carbon diffusion and stoichiometric requirement. Moreover, a new "stepdown" growth mode has been discovered. Via this mode, monolayer graphene domains can have an area of hundreds of square micrometers, while, most importantly, step bunching is avoided and the initial uniformly stepped SiC surface is preserved. The stepdown growth provides a possible route towards uniform epitaxial graphene in wafer size without compromising the initial flat surface morphology of SiC.