Optimization of various isolation techniques to develop low noise, radiation hard double-sided silicon strip detectors for the CBM Silicon Tracking System

TL;DR

This study optimizes isolation techniques in double-sided silicon strip detectors to enhance noise performance, radiation hardness, and charge collection efficiency for the CBM Silicon Tracking System.

Contribution

It introduces a comprehensive comparison of isolation methods and incorporates radiation damage modeling to improve detector design for high-radiation environments.

Findings

Reduced Equivalent Noise Charge (ENC) achieved.

Maximized breakdown voltage and charge collection efficiency.

Validated simulation results with experimental data.

Abstract

This paper reports on the design optimization done for Double Sided silicon microStrip Detectors(DSSDs) to reduce the Equivalent Noise Charge (ENC) and to maximize the breakdown voltage and Charge Collection Efficiency. Various isolation techniques have been explored and a detailed comparison has been studied to optimize the detector performance. For the evaluation of the performance of the silicon detectors, a radiation damage model has been included. The neutron fluence is expected to be 2x10^{13}n_{eq} cm$^{-2}$ per year for five years of expected CBM run with intermediate periods of warm maintenance, cold maintenance and shutdown. Transient simulations have been performed to estimate the charge collection performance of the irradiated detectors and simulations have been verified with experimental data.