Self Consistent Simulation of C-V Characterization and Ballistic Performance of Double Gate SOI Flexible-FET Incorporating QM Effects

TL;DR

This paper presents a self-consistent quantum mechanical simulation of C-V and ballistic I-V characteristics for sub-35nm double gate SOI FETs, highlighting the effects of gate voltages on device behavior.

Contribution

It introduces a novel self-consistent simulation method for C-V and ballistic I-V characteristics incorporating quantum effects in DG SOI FETs, which was not previously reported.

Findings

C-V curves shift positively with negative bottom gate bias.

Threshold voltage varies with bottom gate voltage.

Ballistic performance depends on top gate voltage.

Abstract

Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson solver taking into account the quantum mechanical effects. Although, ATLAS simulations to determine current and other short channel effects in this device have been demonstrated in recent literature, C-V & Ballistic I-V characterizations by using self-consistent method are yet to be reported. C-V characteristic of this device is investigated here with the variation of bottom gate voltage. The depletion to accumulation transition point (i.e. Threshold voltage) of the C-V curve should shift in the positive direction when the bottom gate is negatively biased and our simulation results validate this phenomenon. Ballistic performance of this device has also been studied with the variation of top gate voltage.