Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

TL;DR

This paper presents a self-consistent quantum mechanical modeling of the capacitance-voltage characteristics of depletion mode InGaAs/InAs quantum well FETs, analyzing effects of process parameters like In composition, dielectric, and oxide thickness.

Contribution

It provides a comprehensive electrostatic characterization of depletion mode quantum well FETs incorporating quantum effects and strain, which was lacking in prior studies.

Findings

Inversion capacitance increases with In content.

Ballistic current increases with In content.

Quantum mechanical effects significantly influence C-V characteristics.

Abstract

We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects. Though the experimental results of C-V for enhancement type device is available in recent literature, a complete characterization of electrostatic property of depletion type Buried Channel Quantum Well FET (QWFET) structure is yet to be done. C-V characteristics of the device is studied with the variation of three important process parameters: Indium (In) composition, gate dielectric and oxide thickness. We observed that inversion capacitance and ballistic current tend to increase with the increase in Indium (In) content in InGaAs barrier layer.