The origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene
Ken-ichi Sasaki, Yasuhiro Tokura, Tetsuomi Sogawa

TL;DR
This paper explains the physical origin of the Raman D band in graphene, linking it to bonding and antibonding orbitals, and reviews recent work on how the D band is activated at graphene edges.
Contribution
It provides a new understanding of the D band mechanism in graphene based on bonding and antibonding orbitals, clarifying its activation at edges.
Findings
D band related to bonding and antibonding orbitals
Activation mechanism at graphene edges
Clarification of D band's physical origin
Abstract
In Raman spectroscopy of graphite and graphene, the band at cm is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the band at a graphene edge.
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