Optically excited multi-band conduction in LaAlO3/SrTiO3 heterostructures
V. K. Guduru, A. Granados del Aguila, S. Wenderich, M. K. Kruize, A., McCollam, P. C. M. Christianen, U. Zeitler, A. Brinkman, G. Rijnders, H., Hilgenkamp, and J. C. Maan

TL;DR
This study demonstrates that illuminating LaAlO3/SrTiO3 heterostructures with above-band-gap light significantly enhances their conductivity by creating a high-mobility electron channel, revealing multi-band conduction mechanisms.
Contribution
It provides the first detailed explanation of optically induced multi-band conduction in LaAlO3/SrTiO3 interfaces through a two-carrier model.
Findings
Resistance decreases by over 50% after illumination
Non-linear Hall resistance indicates multiple carrier types
Illumination creates a high-mobility electron channel
Abstract
The low-temperature resistance of a conducting LaAlO3/SrTiO3 interface with a 10 nm thick LaAlO3 film decreases by more than 50% after illumination with light of energy higher than the SrTiO3 band-gap. We explain our observations by optical excitation of an additional high mobility electron channel, which is spatially separated from the photo-excited holes. After illumination, we measure a strongly non-linear Hall resistance which is governed by the concentration and mobility of the photo-excited carriers. This can be explained within a two-carrier model where illumination creates a high-mobility electron channel in addition to a low-mobility electron channel which exists before illumination.
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