In_xGa_{1-x}Sb MOSFET: Performance Analysis by Self Consistent CV Characterization and Direct Tunneling Gate Leakage Current

TL;DR

This study presents a self-consistent simulation of In_xGa_{1-x}Sb MOSFETs, analyzing C-V characteristics and gate leakage currents, revealing how process parameters and material choices affect device performance.

Contribution

It provides the first self-consistent simulation of both C-V and direct tunneling gate leakage in In_xGa_{1-x}Sb MOSFETs, including strain effects and material comparisons.

Findings

Device performance improves with increased compressive strain.

Gate leakage current decreases as ballistic current increases with strain.

Replacing In_xGa_{1-x}Sb with In_xGa_{1-x}As enhances device performance.

Abstract

In this paper, Capacitance-Voltage (C-V) characteristics and direct tunneling (DT) gate leakage current of antimonide based surface channel MOSFET were investigated. Self-consistent method was applied by solving coupled Schr\"odinger-Poisson equation taking wave function penetration and strain effects into account. Experimental I-V and gate leakage characteristic for p-channel InxGa1-xSb MOSFETs are available in recent literature. However, a self- consistent simulation of C-V characterization and direct tunneling gate leakage current is yet to be done for both n- channel and p-channel InxGa1-xSb surface channel MOSFETs. We studied the variation of C-V characteristics and gate leakage current with some important process parameters like oxide thickness, channel composition, channel thickness and temperature for n-channel MOSFET in this work. Device performance should improve as compressive strain increases in channel. Our simulation results validate this phenomenon as ballistic current increases and gate leakage current decreases with the increase in compressive strain. We also compared the device performance by replacing InxGa1-xSb with InxGa1-xAs in channel of the structure. Simulation results show that performance is much better with this replacement.