Opposite Changes in Gap Width of Opposite Spin States Induced by Rashba Effect in Anti-ferromagnetic Graphene on Ni(111)

TL;DR

This study uses density functional theory to show that an external electric field can induce opposite changes in the gap widths of spin states in antiferromagnetic graphene on Ni(111), relevant for spintronics.

Contribution

It demonstrates the effect of an external electric field on spin-dependent gap modifications in antiferromagnetic graphene on Ni(111).

Findings

Electric field induces a gap width difference of tens of meV.

Opposite spin states exhibit opposite changes in gap width.

Results are relevant for spintronic device applications.

Abstract

Graphene is a promising candidate for applications in spintronics. In this paper, Density Functional Theory method is used to calculate the band structure and magnetic properties of graphene on Ni(111). Our results show that once there is antiferromagnetic order in graphene, an external electric field at the order of 10^9 V/m can induce a gap width difference of tens of meV for opposite spin states near the Fermi surface.