Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

TL;DR

This paper responds to a comment on their previous work about controlling the Curie temperature in (Ga,Mn)As, emphasizing the importance of Fermi level positioning within the impurity band in thin films.

Contribution

It clarifies and defends the original findings on Fermi level control of Curie temperature in (Ga,Mn)As against criticisms.

Findings

Highlights the significance of Fermi level placement within the impurity band

Reinforces the role of impurity band in ferromagnetic properties

Underscores the importance of thin film properties

Abstract

Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form.