A Graphene-based Hot Electron Transistor

TL;DR

This paper demonstrates the experimental DC operation of graphene-based hot electron transistors, called Graphene Base Transistors (GBT), with high ON/OFF ratios, compatible with silicon technology and scalable fabrication.

Contribution

It introduces a novel graphene-based transistor design with demonstrated DC functionality and high switching ratios, compatible with existing silicon fabrication processes.

Findings

High ON/OFF current ratio exceeding 50,000

Potential compatibility with silicon wafer-scale fabrication

Successful demonstration of DC switching in GBTs

Abstract

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.