Two-dimensional electronic transport on the surface of 3D topological insulators

TL;DR

This paper develops a comprehensive theoretical model to describe the two-dimensional electronic transport on the surfaces of three-dimensional topological insulators, accounting for disorder, inhomogeneities, and phonon scattering effects.

Contribution

It introduces a novel approach that incorporates disorder-induced inhomogeneities and thermally activated processes, improving the accuracy of transport property predictions for 3DTI surfaces.

Findings

Accurately models surface transport properties at zero and finite temperatures.

Captures the effects of strong disorder and carrier density inhomogeneities.

Highlights the importance of thermally activated processes in transport.

Abstract

We present a theoretical approach to describe the 2D transport properties of the surfaces of three dimensional topological insulators (3DTIs) including disorder and phonon scattering effects. The method that we present is able to take into account the effects of the strong disorder-induced carrier density inhomogeneities that characterize the ground state of the surface of 3DTIs, especially at low doping, as recently shown experimentally. Due to the inhomogeneous nature of the carrier density landscape, standard theoretical techniques based on ensemble averaging over disorder assuming a spatially uniform average carrier density are inadequate. Moreover the presence of strong spatial potential and density fluctuations greatly enhance the effect of thermally activated processes on the transport properties. The theory presented is able to take into account all the effects due to the disorder-induced inhomogeneities, momentum scattering by disorder, and the effect of electron-phonon scattering processes. As a result the developed theory is able to accurately describe the transport properties of the surfaces of 3DTIs both at zero and finite temperature.