Temperature stable 1.3 {\mu}m emission from GaAs

TL;DR

This study demonstrates a method to achieve stable 1.3 μm photoluminescence from GaAs through thermal treatment, with emission linked to specific donor-acceptor pairs, tunable by doping and annealing.

Contribution

It introduces a new approach to produce temperature-stable 1.3 μm emission in GaAs via flash-lamp annealing affecting donor-acceptor pair formation.

Findings

Achieved quasi-temperature independent emission at 1.3 μm from GaAs.

Identified VAs donor and X acceptor pairs as responsible for the emission.

Controlled doping and annealing tune the emission intensity and donor-acceptor pair concentration.

Abstract

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 {\mu}m from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 {\mu}m emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 {\mu}m emission can be easily tuned by controlling doping and annealing conditions.