Analysis of defect formation in semiconductor cryogenic bolometric detectors created by heavy dark matter

TL;DR

This paper investigates how dark matter interactions create stable defects in semiconductor bolometers at cryogenic temperatures, affecting energy measurements and differing between germanium and silicon.

Contribution

It introduces a model for defect formation energy in semiconductor detectors due to dark matter interactions, integrating it into the Luke-Neganov effect framework.

Findings

Energy deposited in germanium defects is about twice that in silicon for the same dark matter particle.

Defect formation impacts the energy balance and measurement accuracy in cryogenic bolometers.

The model helps interpret signals in dark matter detection experiments.

Abstract

The cryogenic detectors in the form of bolometers are presently used for different applications, in particular for very rare or hypothetical events associated with new forms of matter, specifically related to the existence of Dark Matter. In the detection of particles with a semiconductor as target and detector, usually two signals are measured: ionization and heat. The amplification of the thermal signal is obtained with the prescriptions from Luke-Neganov effect. The energy deposited in the semiconductor lattice as stable defects in the form of Frenkel pairs at cryogenic temperatures, following the interaction of a dark matter particle, is evaluated and consequences for measured quantities are discussed. This contribution is included in the energy balance of the Luke effect. Applying the present model to germanium and silicon, we found that for the same incident weakly interacting massive particle the energy deposited in defects in germanium is about twice the value for silicon.