Large K-exciton dynamics in GaN epilayers: the non-thermal and thermal regime

TL;DR

This study investigates exciton dynamics in GaN epilayers, revealing a long-lasting non-thermal distribution within the first 50 ps and identifying impurity scattering as a key factor in exciton thermalization.

Contribution

It provides detailed time-resolved analysis of exciton formation and thermalization in GaN, highlighting the non-thermal regime duration and the dominant scattering mechanisms involved.

Findings

Non-thermal excitonic distribution lasts up to 50 ps

Impurity scattering dominates exciton thermalization at low power

Energy relaxation times characterize the transition to thermal regime

Abstract

We present a detailed investigation concerning the exciton dynamics in GaN epilayers grown on c-plane sapphire substrates, focussing on the exciton formation and the transition from the nonthermal to the thermal regime. The time-resolved kinetics of LO-phonon replicas is used to address the energy relaxation in the excitonic band. From ps time-resolved spectra we bring evidence for a long lasting non-thermal excitonic distribution which accounts for the rst 50 ps. Such a behavior is con rmed in di erent experimental conditions, both when non-resonant and resonant excitation are used. At low excitation power density the exciton formation and their subsequent thermalization is dominated by impurity scattering rather than by acoustic phonon scattering. The estimate of the average energy of the excitons as a function of delay after the excitation pulse provides information on the relaxation time, which describes the evolution of the exciton population to the thermal regime.