Resistance Switching Induced by Electric Field and Light Illumination in Device of FTO/CeO2/Electrolyte/FTO

TL;DR

This study demonstrates resistive switching in an FTO/CeO2/electrolyte/FTO device induced by electric field and light, with stable operation and temporary data storage capabilities, explained by diiodide radical formation.

Contribution

The paper reports a novel resistive switching device using a heterojunction structure with combined electric and optical control, and proposes a mechanism involving diiodide radicals.

Findings

Resistive switching is induced by electric pulses and light illumination.

The device exhibits stable write/erase cycles.

Data can be retained for approximately 100 seconds.

Abstract

A heterojunction-like device consisting of FTO/CeO2/electrolyte/FTO is established with distinct transport performance, where FTO denotes F-doped transparent conducting glass, and the electrolyte is LiI and I2 in acetonitrile. The resistive switching behavior is observed, being induced through applying sufficient negative pulse as well as light illumination. The endurance measurements confirm that the write/erase periodic operation is reproducible and stable in the present device. Furthermore, the retention measurements demonstrate that the information can be stored temporarily for about 100 seconds. A possible mechanism regarding the formation of diiodide radical is proposed to give a reasonable explanation for the observed switching behavior.