Disorder induced field effect transistor in bilayer and trilayer graphene

TL;DR

This paper introduces a novel approach to create a field effect transistor in bilayer and trilayer graphene by leveraging disorder effects confined to one layer, enabling conductance modulation without relying on a bandgap.

Contribution

It demonstrates how disorder can be used to induce a FET effect in various graphene stackings, independent of the presence of an energy gap.

Findings

Disorder confined to one layer significantly modulates conductance.

Bias voltage controls which layer conducts, enabling transistor action.

Effect observed in both gapped and gapless graphene structures.

Abstract

We propose use of disorder to produce a field effect transistor (FET) in biased bilayer and trilayer graphene. Modulation of the bias voltage can produce large variations in the conductance when the disorder's effects are confined to only one of the graphene layers. This effect is based on the bias voltage's ability to select which of the graphene layers carries current, and is not tied to the presence of a gap in the density of states. In particular, we demonstrate this effect in models of gapless ABA-stacked trilayer graphene, gapped ABC-stacked trilayer graphene, and gapped bilayer graphene.