High-order sideband generation in bulk GaAs
Benjamin Zaks, Hunter Banks, Mark S. Sherwin
TL;DR
This study demonstrates high-order sideband generation in bulk GaAs when subjected to intense THz fields, revealing persistent sidebands up to the 10th order at elevated temperatures, advancing understanding of nonlinear optical phenomena in semiconductors.
Contribution
It reports the observation of high-order sidebands in bulk GaAs induced by intense THz fields, extending knowledge of nonlinear optical effects at various temperatures.
Findings
Sidebands observed at frequencies f_NIR + 2nf_THz for n between -4 and 16.
High-order sidebands up to the 10th order persist at 170 K.
Sidebands are generated when resonantly created excitons are driven by intense THz fields.
Abstract
When an intense THz field at frequency f_THz is applied to excitons resonantly created in bulk GaAs by a near IR laser at frequency f_NIR, sidebands are observed at frequencies f_sideband = f_NIR + 2nf_THz, where n is an integer. At temperature T=10 K, sidebands of order -4 {greater than or equal to} 2n {greater than or equal to} 16 are observed. Sidebands up to 10th order persist at 170 K.
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