Ferromagnetic Instability in a Doped Band-Gap Semiconductor FeGa$_{3}$
Kazunori Umeo, Yuta Hadano, Shota Narazu, Takahiro Onimaru, Marcos A., Avila, and Toshiro Takabatake

TL;DR
This study investigates how electron doping via Ge substitution induces ferromagnetic instability and quantum critical behavior in the band-gap semiconductor FeGa3, revealing a small critical doping level and strong electron correlations.
Contribution
It demonstrates that Ge doping induces ferromagnetism and quantum criticality in FeGa3 despite its large band gap, highlighting the role of electron correlations and hybridization disruption.
Findings
Ferromagnetic order appears at very low doping levels (y=0.13).
Quantum critical behavior observed near the critical doping.
No ferromagnetism induced by Co substitution, despite similar electron doping.
Abstract
We report the effects of electron doping on the ground state of a diamagnetic semiconductor FeGa with a band gap of 0.5 eV. By means of electrical resistivity, magnetization and specific heat measurements we have found that gradual substitution of Ge for Ga in FeGaGe yields metallic conduction at a very small level of , then induces weak ferromagnetic (FM) order at with a spontaneous moment of 0.1 /Fe and a Curie temperature K, which continues increasing to K as doping reaches . The emergence of the FM state is accompanied by quantum critical behavior as observed in the specific heat, ln, and in the magnetic susceptibility, . At , the specific heat divided by temperature reaches a large value of 70 mJ/KmolFe, twice as large as that reported…
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