Design and Simulation of Molecular Nonvolatile Single-Electron Resistive Switches

TL;DR

This paper presents a theoretical design and simulation of molecular single-electron resistive switches that operate at room temperature, combining fast switching, long retention, and high ON/OFF ratios, with potential for defect tolerance.

Contribution

It introduces a novel molecular memristive device design and provides a comprehensive theoretical analysis demonstrating its promising switching performance at room temperature.

Findings

Switching times below one second at room temperature.

Retention times exceeding several years.

High ON/OFF current ratios greater than 10^3.

Abstract

We have carried out a preliminary design and simulation of a single-electron resistive switch based on a system of two linear, parallel, electrostatically-coupled molecules: one implementing a single-electron transistor and another serving as a single-electron trap. To verify our design, we have performed a theoretical analysis of this "memristive" device, based on a combination of ab-initio calculations of the electronic structures of the molecules and the general theory of single-electron tunneling in systems with discrete energy spectra. Our results show that such molecular assemblies, with a length below 10 nm and a footprint area of about 5 nm$^2$, may combine sub-second switching times with multi-year retention times and high ($> 10^3$) ON/OFF current ratios, at room temperature. Moreover, Monte Carlo simulations of self-assembled monolayers (SAM) based on such molecular assemblies have shown that such monolayers may also be used as resistive switches, with comparable characteristics and, in addition, be highly tolerant to defects and stray offset charges.