Laser Directly Written Junctionless In-plane-Gate Neuron Thin Film Transistors with AND Logic Function

TL;DR

This paper presents a novel laser-scribed, junctionless in-plane-gate neuron thin-film transistor with AND logic function, fabricated at room temperature, demonstrating effective modulation and low-cost production.

Contribution

It introduces a laser scribing process for fabricating junctionless oxide neuron transistors with in-plane gates, enabling high performance and low-cost manufacturing.

Findings

Effective field-effect modulation of drain current achieved

AND logic demonstrated on dual in-plane gate neuron transistor

Laser scribing technology enables low-cost fabrication

Abstract

Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature with a laser scribing process. The neuron transistors are composed of a bottom ITO floating gate and multiples of two in-plane control gates. The control gates, coupling with the floating gate, control the "on" and "off" of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.