Imaging with SiPMs in noble-gas detectors
N. Yahlali, L. M. P. Fernandes, K. Gonz\'alez, A. N. C. Garcia, A., Soriano

TL;DR
This paper evaluates the photon detection efficiency of UV-enhanced silicon photomultipliers (SiPMs) for noble-gas detector imaging, highlighting their advantages over traditional TPB-coated SiPMs in VUV light detection.
Contribution
It provides a detailed comparison of PDE for UV-enhanced SiPMs versus standard and TPB-coated SiPMs, demonstrating superior UV sensitivity of the new prototypes.
Findings
UV-enhanced SiPMs achieve up to 44% PDE at 325 nm
Standard SiPMs show only about 3% PDE in UV range
TPB-coated SiPMs have significantly lower PDE than UV-enhanced SiPMs
Abstract
Silicon photomultipliers (SiPMs) are photosensors widely used for imaging in a variety of high energy and nuclear physics experiments. In noble-gas detectors for double-beta decay and dark matter experiments, SiPMs are attractive photosensors for imaging. However they are insensitive to the VUV scintillation emitted by the noble gases (xenon and argon). This difficulty is overcome in the NEXT experiment by coating the SiPMs with tetraphenyl butadiene (TPB) to convert the VUV light into visible light. TPB requires stringent storage and operational conditions to prevent its degradation by environmental agents. The development of UV sensitive SiPMs is thus of utmost interest for experiments using electroluminescence of noble-gas detectors. It is in particular an important issue for a robust and background free neutrinoless double-beta experiment with xenon gas aimed by NEXT. The photon…
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