AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport

TL;DR

This study synthesizes AB-stacked multilayer graphene via chemical vapor deposition and investigates hot carrier transport properties at very low temperatures and high magnetic fields, revealing weak electron-phonon coupling effects.

Contribution

It introduces a method to synthesize AB-stacked multilayer graphene and characterizes hot carrier transport, providing insights into electron-phonon interactions in this material.

Findings

Differential conductance shows a dip at zero bias at low temperatures.

Magnetic fields reduce the dI/dV dip due to enhanced cyclotron phonon scattering.

Successful construction of suspended multilayer graphene devices.

Abstract

We report the synthesis of AB-stacked multilayer graphene via ambient pressure chemical vapor deposition on Cu foils, and demonstrate a method to construct suspended multilayer graphene devices. In four-terminal geometry, such devices were characterized by hot carrier transport at temperatures down to 240 mK and in magnetic fields up to 14 T. The differential conductance (dI/dV) shows a characteristic dip at longitudinal voltage bias V=0 at low temperatures, indicating the presence of hot electron effect due to a weak electron-phonon coupling. Under magnetic fields, the magnitude of the dI/dV dip diminishes through the enhanced intra-Landau level cyclotron phonon scattering. Our results provide new perspectives in obtaining and understanding AB-stacked multilayer graphene, important for future graphene-based applications.