Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy

TL;DR

This paper introduces a novel method for synthesizing densely ordered graphene nanoribbons on vicinal SiC surfaces, enabling detailed electronic structure analysis and band-gap observation.

Contribution

A new epitaxial growth technique using vicinal SiC surfaces to produce high-density, well-ordered graphene nanoribbons with controlled edge structures.

Findings

Successful fabrication of ordered GNRs with armchair edges

Observation of a band-gap of at least 0.14 eV in GNRs

High-density GNR arrays suitable for electronic studies

Abstract

We present a new method of producing a densely ordered array of epitaxial graphene nanoribbons (GNRs) using vicinal SiC surfaces as a template, which consist of ordered pairs of (0001) terraces and nanofacets. Controlled selective growth of graphene on approximately 10 nm wide of (0001) terraces with 10 nm spatial intervals allows GNR formation. By selecting the vicinal direction of SiC substrate, [1-100], well-ordered GNRs with predominantly armchair edges are obtained. These structures, the high density GNRs, enable us to observe the electronic structure at K-points by angle-resolved photoemission spectroscopy, showing clear band-gap opening of at least 0.14 eV.