On melting of silicon carbide under pressure
Petr S. Sokolov, Vladimir A. Mukhanov, Thierry Chauveau, Vladimir L., Solozhenko

TL;DR
This study investigates the melting behavior of silicon carbide under high pressure, revealing that it melts congruently with a negative melting curve slope, which has implications for understanding its phase diagram.
Contribution
It provides the first detailed measurements of silicon carbide's melting curve at high pressures, showing congruent melting and a negative slope.
Findings
SiC melts congruently at 5-8 GPa
Melting curve slope is -44 +/- 4 K/GPa
Data enhances understanding of SiC phase diagram
Abstract
The melting of silicon carbide has been studied at pressures 5-8 GPa and temperatures up to 3300 K. It has been found that SiC melts congruently, and its melting curve has negative slope of -44 +/- 4 K/GPa.
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