Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

TL;DR

This study investigates how annealing affects spin transport in epitaxial graphene on SiC, revealing the emergence of magnetic moments and significant reductions in spin relaxation parameters after annealing.

Contribution

It demonstrates that annealing induces magnetic moments in epitaxial graphene, affecting spin relaxation and diffusion properties, with insights into temperature-dependent g-factor behavior.

Findings

Spin relaxation length and time decrease after annealing

Magnetic moments are detected via g-factor temperature dependence

Annealing induces magnetic moments impacting spin transport

Abstract

We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments.