Atomistic theoretical study of electronic and polarization properties of elliptical, single and vertically stacked InAs quantum dots
Muhammad Usman

TL;DR
This study uses atomistic simulations to analyze how elliptical shape asymmetry in InAs quantum dots influences their electronic and polarization properties, providing insights for designing optoelectronic devices with tailored polarization responses.
Contribution
It offers a detailed atomistic analysis of how shape asymmetry affects polarization and electronic properties in single and stacked InAs quantum dots, guiding experimental design.
Findings
Elongation of tall QDs allows wider tuning of DOP.
Base elongation orientation controls the sign of DOP.
Elliptical shape can tune either DOP[110] or DOP[-110], not both simultaneously.
Abstract
The demonstration of isotropic polarization response from semiconductor quantum dots (QDs) is a crucial step towards the design of several optoelectronic technologies. Among many parameters that impact the degree of polarization (DOP) of a QD system, the shape asymmetry is a critical factor. We perform multi-million-atom simulations to study the impact of the elliptical shapes on the electronic and polarization properties of single and vertically stacked InAs QDs. The comparison between a low aspect ratio (AR) and a high AR QD reveals that the electronic and the polarization properties strongly depend on the AR of the QD; the elongation of a tall QD allows tuning of the DOP over a much wider range. We then extend our analysis to an experimentally reported vertical stack of nine QDs (9-VSQDs) that has shown significant potential to achieve isotropic polarization properties. We analyse…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsQuantum Dots Synthesis And Properties · Semiconductor Quantum Structures and Devices · ZnO doping and properties
