Configuration interaction in delta-doped heterostructures

TL;DR

This paper investigates how impurity states in delta-doped layers interact with quantum well states and affect optical transitions, using the Anderson-Fano model to analyze experimental GaAs structures with delta-Mn layers.

Contribution

It introduces a theoretical framework for understanding configuration interaction in delta-doped heterostructures and its impact on optical properties.

Findings

Interaction modifies interband optical transitions in quantum wells.

The model explains experimental observations in GaAs delta-Mn structures.

Configuration interaction influences carrier dynamics in heterostructures.

Abstract

We analyze the tunnel coupling between an impurity state located in a $\delta$-layer and the 2D delocalized states in the quantum well (QW) located at a few nanometers from the $\delta$ -- layer. The problem is formulated in terms of Anderson-Fano model as configuration interaction between the carrier bound state at the impurity and the continuum of delocalized states in the QW. An effect of this interaction on the interband optical transitions in the QW is analyzed. The results are discussed regarding the series of experiments on the GaAs structures with a $\delta$-Mn layer.