Anisotropic Fermi Contour of (001) GaAs Holes in Parallel Magnetic Fields
D. Kamburov, M. Shayegan, R. Winkler, L. N. Pfeiffer, K. W. West, and, K. W. Baldwin
TL;DR
This study reveals a significant spin-dependent anisotropy in the Fermi contours of high-mobility (001) GaAs holes under parallel magnetic fields, using surface modulation and quantum oscillation measurements.
Contribution
It provides the first direct experimental measurement of spin-dependent Fermi contour anisotropy in GaAs holes induced by parallel magnetic fields.
Findings
Severe spin-dependent Fermi contour anisotropy observed
Fourier analysis of oscillations yields Fermi contour areas
Results agree semi-quantitatively with theoretical calculations
Abstract
We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands.
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