Efficiency Limit Of AlxGa1-xAs Solar Cell Modified By AlyGa1-ySb Quantum Dot Intermediate Band Embedded Outside Of The Depletion Region

TL;DR

This paper proposes a novel type-II GaSb quantum dot intermediate-band solar cell with QDs located outside the depletion region, aiming to enhance efficiency by reducing recombination and leakage currents.

Contribution

The study introduces a new IB solar cell design with QDs outside the depletion region, addressing recombination issues and potentially improving solar cell efficiency.

Findings

QDs outside the depletion region reduce leakage currents.

The proposed structure can enhance solar cell efficiency.

Carrier escape relies on photon or thermal assistance.

Abstract

Recombination through quantum dots (QDs) is a major factor that limits efficiency of QD intermediate-band (IB) solar cells. Our proposal for a new IB solar cell based on type-II GaSb QDs located outside the depletion region of a GaAs p-n-junction aims to solve this problem. The important advantage of proposed heterostructure appears due to the outside location of IB. Such IB does not assist generation of additional leakage current flow through the depletion region. Carriers cannot escape from outside QDs through the buffer layer and the depletion region into GaAs substrate by tunneling because QDs are far from the depletion layer. Only solar photon or thermal assistance may enable electron escape from QDs. Such type-II QD IB solar cell concept promises an efficiency enhancement relative to that of GaAs solar cells.