Effects of interface resistance asymmetry on local and non-local magnetoresistance structures
Tetsufumi Tanamoto, Hideyuki Sugiyama, Tomoaki Inokuchi, Mizue, Ishikawa, and Yoshiaki Saito

TL;DR
This paper theoretically examines how asymmetry in interface resistance affects local and non-local magnetoresistance measurements, revealing maximum effects at symmetry for local structures and minimal impact on non-local ones.
Contribution
It provides a theoretical analysis of interface resistance asymmetry effects on magnetoresistance, highlighting differences between local and non-local measurement sensitivities.
Findings
Maximum magnetoresistance ratio at symmetric interfaces for local measurements
Weak effect of asymmetry on non-local measurement structures
Asymmetry impacts local and non-local structures differently
Abstract
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and detection sides, the magnetic transport properties are considered to depend on the asymmetry of the two interfaces. We theoretically investigate the effect of the asymmetric interfaces of the injection side and the detection side on both the local and non-local magnetoresistance measurements. The results show the magnetoresistance ratio of local measurement structure has its maximum at the symmetric structure, and the effect of the asymmetry is very weak for the non-local measurement structure.
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