Impurity impact ionization avalanche in p-type diamond

TL;DR

This study demonstrates impurity impact ionization avalanche in heavily boron-doped p-type diamond films at room temperature, using pulsed measurements to analyze electrical behavior under high electric fields.

Contribution

It provides experimental evidence of impact ionization avalanche in p-type diamond, a phenomenon not previously well-characterized in this material.

Findings

Impurity impact ionization avalanche observed at room temperature.

Pulsed technique effectively reduces thermal effects during measurements.

Electrical conductivity increases significantly under high electric fields.

Abstract

Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.