Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics
Chi Xiong, Wolfram H. P. Pernice, Xiankai Sun, Carsten Schuck, King Y., Fong, and Hong X. Tang

TL;DR
This paper introduces aluminum nitride (AlN) as a promising material for integrated optomechanical and nonlinear optical devices, offering advantages over silicon in visible wavelengths, nonlinear interactions, and device stability.
Contribution
The study develops an AlN-on-silicon platform enabling low-loss optical guiding, high-quality optomechanical devices, and demonstrates electro-optic modulation and second-harmonic generation.
Findings
AlN-on-silicon platform achieves high optical and mechanical quality.
Demonstration of electro-optic modulation in AlN circuits.
Efficient second-harmonic generation observed in AlN photonics.
Abstract
Silicon photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, silicon is limited to wavelengths above 1100 nm and does not allow device operation in the visible spectrum range where low noise lasers are conveniently available. The narrow band gap of silicon also makes silicon optomechanical devices susceptible to strong two-photon absorption and free carrier absorption, which often introduce strong thermal effect that limit the devices' stability and cooling performance. Further, silicon also does not provide the desired lowest order optical nonlinearity for interfacing with other active electrical components on a chip. On the other hand, aluminum nitride (AlN) is a wideband semiconductor widely used in micromechanical resonators due to its low mechanical loss and high electromechanical coupling strength. Here we report the…
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