Resonant addressing and manipulation of silicon vacancy qubits in silicon carbide

TL;DR

This paper demonstrates the resonant control and long spin coherence of silicon vacancy qubits in silicon carbide, highlighting their potential for quantum information processing due to their unique spin properties and technological advantages.

Contribution

It introduces silicon vacancy defects in silicon carbide as promising qubits with resonant control and long coherence, combining advantages of semiconductors and diamond NV centers.

Findings

Resonant control of silicon vacancy qubits achieved.

Long spin memory demonstrated with pulsed magnetic resonance.

Potential for quantum applications established.

Abstract

Several systems in the solid state have been suggested as promising candidates for spin-based quantum information processing. In spite of significant progress during the last decade, there is a search for new systems with higher potential [D. DiVincenzo, Nature Mat. 9, 468 (2010)]. We report that silicon vacancy defects in silicon carbide comprise the technological advantages of semiconductor quantum dots and the unique spin properties of the nitrogen-vacancy defects in diamond. Similar to atoms, the silicon vacancy qubits can be controlled under the double radio-optical resonance conditions, allowing for their selective addressing and manipulation. Furthermore, we reveal their long spin memory using pulsed magnetic resonance technique. All these results make silicon vacancy defects in silicon carbide very attractive for quantum applications.