Effect of Site-disorder, Off-stoichiometry and Epitaxial Strain on the Optical Properties of Magnetoelectric Gallium Ferrite

TL;DR

This study combines experimental and theoretical approaches to understand how site disorder, off-stoichiometry, and strain influence the optical properties of magnetoelectric gallium ferrite, revealing the importance of these factors in tailoring material behavior.

Contribution

It provides new insights into the effects of site disorder and epitaxial strain on the optical properties of gallium ferrite through combined experimental and theoretical analysis.

Findings

Optical properties measured via ellipsometry match theoretical predictions when considering site disorder and strain.

Site disorder and strain significantly modify the electronic band structure, lowering the band-gap.

Optical activity mainly arises from O2p-Fe3d transitions in GaFeO3.

Abstract

We present a combined experimental-theoretical study demonstrating the role of site disorder, off-stoichiometry and strain on the optical behavior of magnetoelectric gallium ferrite. Optical properties such as band-gap, refractive indices and dielectric constants were experimentally obtained by performing ellipsometric studies over the energy range 0.8 eV to 4.2 eV on pulsed laser deposited epitaxial thin films of stoichiometric gallium ferrite with b-axis orientation and the data was compared with theoretical results. Calculations on the ground state structure show that the optical activity in GaFeO3 arises primarily from O2p-Fe3d transitions. Further, inclusion of site disorder and epitaxial strain in the ground state structure significantly improves the agreement between the theory and the room temperature experimental data substantiating the presence of site-disorder in the experimentally derived strained GaFeO3 films at room temperature. We attribute the modification of the ground state optical behavior upon inclusion of site disorder to the corresponding changes in the electronic band structure, especially in Fe3d states leading to a lowered band-gap of the material.