Quantum Memories via Electromagnetically Induced Transparency in Three-Level Systems

TL;DR

This paper investigates the use of Laguerre-Gauss beams and three-level atomic systems with Electromagnetically Induced Transparency (EIT) to develop quantum memories, providing both theoretical analysis and practical insights.

Contribution

It offers a detailed analysis of the conditions under which EIT occurs in LG beams and three-level systems, advancing the understanding of quantum memory implementation.

Findings

EIT can be achieved with LG beams under specific conditions.

Theoretical and practical criteria for EIT in three-level systems are identified.

Conditions for effective quantum memory storage are established.

Abstract

This work aims at analyzing the adequacy of Laguerre-Gauss (LG) beams and three-level quantum systems to build quantum memories. We focus on such systems in which there is a phenomenon called Eletromagnetic Induced Transparency (EIT) which enables the information storage in atomic cells. We show both theoretical and practical results regarding LG beams and the conditions according to which EIT raises. The existence of such conditions is necessary to the implementation of quantum memories in this scenario.